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RS1L120GNTB

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description RS1L120GN IS LOW ON - RESISTANCE
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Inventory: 72
Minimum: 1
Total Price: USD $1.55
Unit Price: USD $1.55232
≥1 USD $1.55232
≥10 USD $1.289904
≥100 USD $1.026379
≥500 USD $0.868468
≥1000 USD $0.73689

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.7m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.7V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 30V
Current - Continuous Drain (Id) @ 25°C 12A Ta 36A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0198Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 10 mJ
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