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CSD19531Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 100V, N ch NexFET MOSFET?, single SON5x6, 6.4mOhm 8-VSONP -55 to 150
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Inventory: 4357
Minimum: 1
Total Price: USD $1.57
Unit Price: USD $1.5708
≥1 USD $1.5708
≥10 USD $1.30284
≥100 USD $1.037282
≥500 USD $0.877708
≥1000 USD $0.744725

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19531
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.4m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3870pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 5.8 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.2 ns
Turn-Off Delay Time 18.4 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 337A

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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