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SIHH21N65E-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 20.3A PWRPAK8X8
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Inventory: 4552
Minimum: 1
Total Price: USD $8.52
Unit Price: USD $8.515272
≥1 USD $8.515272
≥200 USD $3.398114
≥500 USD $3.285073
≥1000 USD $3.228553

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PSSO-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2404pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.3A Tc
Gate Charge (Qg) (Max) @ Vgs 99nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 20.3A
Drain-source On Resistance-Max 0.17Ohm
Pulsed Drain Current-Max (IDM) 53A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 353 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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