2N7000RLRMG

Rochester Electronics, LLC

RoHS

RoHS compliant

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description SMALL SIGNAL FET

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

JESD-609 Code e1

Pbfree Code yes

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Terminal Finish TIN SILVER COPPER

Technology MOSFET (Metal Oxide)

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) 260

Reach Compliance Code unknown

Time@Peak Reflow Temperature-Max (s) 40

Pin Count 3

JESD-30 Code O-PBCY-T3

Qualification Status COMMERCIAL

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 350mW Tc

Operating Mode ENHANCEMENT MODE

FET Type N-Channel

Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id 3V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V

Current - Continuous Drain (Id) @ 25°C 200mA Ta

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

Vgs (Max) ±20V

Drain Current-Max (Abs) (ID) 0.2A

Drain-source On Resistance-Max 5Ohm

DS Breakdown Voltage-Min 60V

Feedback Cap-Max (Crss) 5 pF

Compliance

RoHS Status ROHS3 Compliant

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