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IXFB210N30P3

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description IXYS SEMICONDUCTOR IXFB210N30P3MOSFET Transistor, N Channel, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V
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Inventory: 57
Minimum: 1
Total Price: USD $34.28
Unit Price: USD $34.279875
≥1 USD $34.279875
≥10 USD $33.257948
≥100 USD $41.454105
≥500 USD $40.117455
≥1000 USD $38.779808

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264
Transistor Element Material SILICON

Dimensions

Height 26.59mm
Length 20.29mm
Width 5.31mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1890W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 105A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 16200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Gate Charge (Qg) (Max) @ Vgs 268nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 210A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0145Ohm
Pulsed Drain Current-Max (IDM) 550A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 4000 mJ

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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