VN2222LLRLRA

Rochester Electronics, LLC

RoHS

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description SMALL SIGNAL N-CHANNEL MOSFET

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount NO

Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Terminal Finish TIN LEAD

Technology MOSFET (Metal Oxide)

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) 240

Time@Peak Reflow Temperature-Max (s) 30

Pin Count 3

JESD-30 Code O-PBCY-T3

Qualification Status COMMERCIAL

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 400mW Ta

Operating Mode ENHANCEMENT MODE

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id 2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V

Current - Continuous Drain (Id) @ 25°C 150mA Ta

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Drain Current-Max (Abs) (ID) 0.15A

DS Breakdown Voltage-Min 60V

Feedback Cap-Max (Crss) 5 pF

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