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RoHS
RoHS RoHS compliant
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 46A TO-3PF
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Capacitance -3pF
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 120W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 120W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 93m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Ta
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 150ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.093Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 115A
Avalanche Energy Rating (Eas) 142 mJ

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free
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