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NTD50N03R-35G

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-251-3 Stub Leads, IPak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Inventory: 5104
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.023435
≥1 USD $1.023435
≥10 USD $0.839895
≥100 USD $0.81396
≥500 USD $0.787028
≥1000 USD $0.761093

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 30A, 11.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 11.5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 7.8A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 20 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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