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STH260N6F6-2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 180A H2PAK
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Inventory: 1079
Minimum: 1
Total Price: USD $4.19
Unit Price: USD $4.19496
≥1 USD $4.19496
≥10 USD $3.52044
≥100 USD $2.84786
≥500 USD $2.53139

Technical Details

Supply Chain

Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE?, STripFET? VI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 2MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Base Part Number STH260
Pin Count 2
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 31.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Rise Time 165 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 62.6 ns
Turn-Off Delay Time 144.4 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 720A

Dimensions

Height 4.8mm
Length 15.8mm
Width 10.4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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