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CSD17552Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 17A 8SON
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Inventory: 5056
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.94248
≥1 USD $0.94248
≥10 USD $0.774312
≥100 USD $0.602448
≥500 USD $0.510621
≥1000 USD $0.415958

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17552
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 7.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 11.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 12.2 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 45 mJ
Feedback Cap-Max (Crss) 36 pF

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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