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TN0104N8-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 40V 0.63A 4-Pin(3+Tab) SOT-89
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Inventory: 16811
Minimum: 1
Total Price: USD $1.32
Unit Price: USD $1.32132
≥1 USD $1.32132
≥10 USD $1.08108
≥100 USD $1.00716

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON

Dimensions

Height 1.6mm
Length 4.6mm
Width 2.6mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 20V
Current - Continuous Drain (Id) @ 25°C 630mA Tj
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 630mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.63A
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 40V

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