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CSD16342Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Channel NexFET Power MOSFET
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Inventory: 5222
Minimum: 1
Total Price: USD $1.01
Unit Price: USD $1.00716
≥1 USD $1.00716
≥10 USD $0.82236
≥100 USD $0.639316
≥500 USD $0.541907
≥1000 USD $0.441441

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16342
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 20A, 8V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 4.5V
Rise Time 16.6ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 10V
DS Breakdown Voltage-Min 25V
Feedback Cap-Max (Crss) 69 pF

Dimensions

Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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