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FDD6N50FTM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 5.5A DPAK
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Inventory: 13675
Minimum: 1
Total Price: USD $1.2
Unit Price: USD $1.2012
≥1 USD $1.2012
≥10 USD $0.97944
≥100 USD $0.761561
≥500 USD $0.645525
≥1000 USD $0.525848

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.15Ohm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number FDD6N50
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.15 Ω @ 2.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V
Rise Time 28.3 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20.5 ns
Turn-Off Delay Time 33.4 ns
Continuous Drain Current (ID) 5.5A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 270 mJ
Feedback Cap-Max (Crss) 9.5 pF

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

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