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TN2435N8-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Transistor: N-MOSFET; unipolar; 350V; 1.6W; SOT89-3; 1A
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Inventory: 6884
Minimum: 1
Total Price: USD $0.99
Unit Price: USD $0.993005
≥1 USD $0.993005
≥10 USD $0.963799
≥100 USD $0.934593
≥500 USD $0.898085

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 365mA Tj
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 365mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.365A
Drain to Source Breakdown Voltage 350V

Dimensions

Height 1.6mm
Length 4.6mm
Width 2.6mm

Compliance

RoHS Status ROHS3 Compliant

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