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RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description P-CHANNEL POWER MOSFET
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Inventory: 14925
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42504
≥1 USD $0.42504

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 900mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 0.125Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
FET Feature Schottky Diode (Isolated)
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