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NTD80N02-001

Rochester Electronics, LLC
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Inventory: 7315
Minimum: 1
Total Price: USD $12.48
Unit Price: USD $12.475733
≥1 USD $12.475733
≥10 USD $10.236345
≥100 USD $9.916148
≥500 USD $9.596948
≥1000 USD $9.27675

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2.6pF @ 20V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0058Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 733 mJ

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