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R5019ANJTL

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 19A LPTS
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Inventory: 1130
Minimum: 1
Total Price: USD $3.16
Unit Price: USD $3.161826
≥1 USD $3.161826
≥10 USD $2.977193

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 83
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Current - Continuous Drain (Id) @ 25°C 19A Ta
Rise Time 115ns
Fall Time (Typ) 100 ns
Turn-Off Delay Time 165 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 76A
Avalanche Energy Rating (Eas) 24.3 mJ

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