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SI7738DP-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 150V 30A 96W 38mohm @ 10V
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Inventory: 6151
Minimum: 1
Total Price: USD $0.74
Unit Price: USD $0.740234
≥1 USD $0.740234
≥10 USD $0.718463
≥100 USD $0.696691
≥500 USD $0.669477

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Dimensions

Height 1.04mm
Length 4.9mm
Width 5.89mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.4W Ta 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.4W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 7.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 75V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 30A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 45 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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