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FDB9403-F085

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 110A TO263AB
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Inventory: 131
Minimum: 1
Total Price: USD $4.1
Unit Price: USD $4.10256
≥1 USD $4.10256
≥10 USD $3.447444

Technical Details

Supply Chain

Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101, PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 333W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 333W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 213nC @ 10V
Rise Time 19.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 968 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Alternative Model

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