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SI4048DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET, N CH, W/D, 30V, 19.3A, SO8
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Inventory: 33030
Minimum: 1
Total Price: USD $3.77
Unit Price: USD $3.767558
≥1 USD $3.767558
≥10 USD $3.091253
≥100 USD $2.994495
≥500 USD $2.897738
≥1000 USD $2.80098

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 5.7W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19.3A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 19.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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