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NTMFS4C06NT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 20A 8-Pin SO-FL T/R
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Inventory: 1605
Minimum: 1
Total Price: USD $0.75
Unit Price: USD $0.74844
≥1 USD $0.74844
≥10 USD $0.648648
≥100 USD $0.449341
≥500 USD $0.375458

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 770mW Ta 30.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 69A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 69A
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.004Ohm
DS Breakdown Voltage-Min 30V

Dimensions

Height 1.05mm
Length 6.1mm
Width 5.1mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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