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Package 3-XFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 0.14A TLM3D6D8
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Inventory: 9144
Minimum: 1
Total Price: USD $0.49
Unit Price: USD $0.48972
≥1 USD $0.48972
≥10 USD $0.418572
≥100 USD $0.291152
≥500 USD $0.227341
≥1000 USD $0.184781
≥3000 USD $0.165184

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 3-XFDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V
Current - Continuous Drain (Id) @ 25°C 140mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) 8V
Drain Current-Max (Abs) (ID) 0.14A
Drain-source On Resistance-Max 5Ohm
DS Breakdown Voltage-Min 20V
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