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SI8461DB-T2-E1

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 4-XFBGA, CSPBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description SI8461DB-T2-E1 P-channel MOSFET Transistor; 3 A; 20 V; 4-Pin MICRO FOOT
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Inventory: 6037
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.349125
≥1 USD $0.349125
≥10 USD $0.286283
≥100 USD $0.277305
≥500 USD $0.268328
≥1000 USD $0.25935

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 780mW Ta 1.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780mW
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 25 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -3.7A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage -20V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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