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TN2640K4-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET,N-CHANNEL ENHANCEMENT-MODE,400V,5.0 Ohm3 DPAKT/R
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Inventory: 29618
Minimum: 1
Total Price: USD $2.63
Unit Price: USD $2.6334
≥1 USD $2.6334
≥10 USD $2.19912
≥100 USD $1.9866

Technical Details

Supply Chain

Factory Lead Time 7 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 2A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 400V

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.1mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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