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SIE882DF-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 60A POLARPAK
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Inventory: 2910
Minimum: 1
Total Price: USD $2.08
Unit Price: USD $2.080338
≥1 USD $2.080338
≥10 USD $1.962581
≥100 USD $1.85149
≥500 USD $1.746692
≥1000 USD $1.647826

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (L)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-PDSO-N4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 5.2W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 170 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 85 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 25V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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