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SIE820DF-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (S)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 136A 104W 3.5mohm @ 4.5V
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Inventory: 852
Minimum: 1
Total Price: USD $2.25
Unit Price: USD $2.25456
≥1 USD $2.25456
≥10 USD $1.896048
≥100 USD $1.58891
≥500 USD $1.402632

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (S)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-XDSO-N4
Number of Elements 1
Power Dissipation-Max 5.2W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 18A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 45 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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