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IRFP440

Rochester Electronics, LLC
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Inventory: 2079
Minimum: 1
Total Price: USD $2.74
Unit Price: USD $2.74428
≥1 USD $2.74428

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8.5A
Drain-source On Resistance-Max 0.8Ohm
Pulsed Drain Current-Max (IDM) 34A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 320 mJ

Alternative Model

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