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IRFS7434TRLPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 195A D2PAK
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Inventory: 10053
Minimum: 1
Total Price: USD $4.36
Unit Price: USD $4.355085
≥1 USD $4.355085
≥10 USD $3.574043
≥100 USD $3.462323
≥500 USD $3.350603
≥1000 USD $3.238883

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?, StrongIRFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 294W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 294W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V
Rise Time 68 ns
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 780A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 115 ns
Fall Time (Typ) 68 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 40V

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Alternative Model

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