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IPB014N06NATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 34A TO263-7
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Inventory: 2857
Minimum: 1
Total Price: USD $1.06
Unit Price: USD $1.057484
≥1 USD $1.057484
≥10 USD $1.026382
≥100 USD $0.99528
≥500 USD $0.956401

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 214W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 30V
Current - Continuous Drain (Id) @ 25°C 34A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Rise Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 34A
Drain-source On Resistance-Max 0.0014Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 420 mJ

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