Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N9
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Ta 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 68A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Ta 114A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 114A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 375A
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 460A
Avalanche Energy Rating (Eas) 850 mJ