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SSM6J212FE,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 4A ES6
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Inventory: 6095
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Total Price: USD $0
Unit Price: USD $0.002993
≥1 USD $0.002993
≥10 USD $0.002993
≥100 USD $0.002993
≥500 USD $0.002993
≥1000 USD $0.002993
≥10000 USD $0.001995

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 40.7m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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