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SQ2308CES-T1_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Automotive N-Channel 60 V (D-S) 175 °C MOSFET
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Inventory: 15841
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.056092
≥1 USD $0.056092
≥10 USD $0.054442
≥100 USD $0.052792
≥500 USD $0.05073

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.3A
Threshold Voltage 2V
JEDEC-95 Code TO-236AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C

Dimensions

Height 1.12mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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