Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 450mOhm
Avalanche Energy Rating (Eas) 90 mJ
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 5.4A
Turn-Off Delay Time 7.5 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 50 ns
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 451m Ω @ 2.7A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 7 ns
Case Connection DRAIN
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 28W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Current Rating -5.4A
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -60V
Subcategory Other Transistors
Terminal Finish Tin (Sn)