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DMG4800LK3-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 10A TO252
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Inventory: 7853
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.53592
≥1 USD $0.53592
≥10 USD $0.458304
≥100 USD $0.318595
≥500 USD $0.248741
≥1000 USD $0.202181

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 2
Power Dissipation-Max 1.71W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.71W
Case Connection DRAIN
Turn On Delay Time 5.03 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 798pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V
Rise Time 4.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 8.55 ns
Turn-Off Delay Time 26.33 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 48A

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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