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IXFT32N50Q

IXYS
RoHS
/
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 32A TO-268
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HiPerFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 32A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 416W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4925pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 128A
Avalanche Energy Rating (Eas) 1500 mJ
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