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RoHS
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Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 900MA 6TSOP
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Inventory: 362135
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.36708
≥1 USD $0.36708
≥10 USD $0.301245
≥100 USD $0.29127
≥500 USD $0.282293
≥1000 USD $0.273315

Technical Details

Physical

Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Packaging Tube
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 540mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 0.9A
Pulsed Drain Current-Max (IDM) 7A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 9.5 mJ
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