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BSC050N03MSGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP
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Inventory: 52404
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.296258
≥1 USD $0.296258
≥10 USD $0.24339
≥100 USD $0.23541
≥500 USD $0.228428
≥1000 USD $0.220448

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 7.2 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0063Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 35 mJ

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