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NTD4860N-35G

ON Semiconductor
RoHS
/
Package TO-251-3 Stub Leads, IPak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 10.4A IPAK
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.28W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1308pF @ 12V
Current - Continuous Drain (Id) @ 25°C 10.4A Ta 65A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 12.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 65A
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 84.5 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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