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IRL3715STRRPBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 54A D2PAK
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 71W Tc
Element Configuration Single
Power Dissipation 71W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 10V
Current - Continuous Drain (Id) @ 25°C 54A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 73ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 54A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.06nF
Drain to Source Resistance 14mOhm
Rds On Max 14 mΩ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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