Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.65mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 340A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Dual Supply Voltage 24V
Input Capacitance 7.59nF
Drain to Source Resistance 1.65mOhm
Rds On Max 1.65 mΩ
Nominal Vgs 4 V