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IRFS5615TRLPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 33A D2PAK
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Inventory: 2443
Minimum: 1
Total Price: USD $7.51
Unit Price: USD $7.51317
≥1 USD $7.51317
≥10 USD $6.16455
≥100 USD $5.972033
≥500 USD $5.779515
≥1000 USD $5.586

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 4.826mm
Length 10.668mm
Width 9.652mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 144W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 144W
Case Connection DRAIN
Turn On Delay Time 8.9 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 42m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 50V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 23.1 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.1 ns
Turn-Off Delay Time 17.2 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 150V

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