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IXFX32N50Q

IXYS
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 32A PLUS247
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Inventory: 4150
Minimum: 1
Total Price: USD $25.19
Unit Price: USD $25.19286
≥1 USD $25.19286
≥10 USD $20.671193
≥100 USD $20.02581
≥500 USD $19.37943
≥1000 USD $18.73305

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 416W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 416W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 128A
Avalanche Energy Rating (Eas) 1500 mJ

Compliance

RoHS Status RoHS Compliant

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