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DMN5L06T-7
Diodes IncorporatedRoHS
/
Package SOT-523
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 50V 280MA SOT-523
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CAPACITANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 200mA, 2.7V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 280mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.8V 2.7V
Vgs (Max) ±20V
Continuous Drain Current (ID) 280mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.28A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 50V
Feedback Cap-Max (Crss) 5 pF
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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