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FDV303N_NB9U008

ON Semiconductor
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 680MA SOT-23
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 350mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 680mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) 8V

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