Packaging Cut Tape (CT)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.85MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5114pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Rise Time 78ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 5.114nF
Recovery Time 36 ns
Drain to Source Resistance 1.85mOhm
Rds On Max 1.85 mΩ
Nominal Vgs 1.8 V