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NTGD3147FT1G

ON Semiconductor
RoHS
/
Package SOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 2.2A 6-TSOP
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Inventory: 3571
Minimum: 1
Total Price: USD $16.71
Unit Price: USD $16.705133
≥1 USD $16.705133
≥10 USD $13.706648
≥100 USD $13.27872
≥500 USD $12.850793
≥1000 USD $12.421868

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -25°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 6.2ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 14.5 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.145Ohm
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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