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NTB18N06LT4G

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) D2PAK T/R
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Inventory: 12020
Minimum: 1
Total Price: USD $17.64
Unit Price: USD $17.642783
≥1 USD $17.642783
≥10 USD $14.476718
≥100 USD $14.023853
≥500 USD $13.571985
≥1000 USD $13.11912

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 15A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 48.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 121 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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