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SI1051X-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 8V 1.2A SC89-6
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Inventory: 6102
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.112718
≥1 USD $0.112718
≥10 USD $0.092768
≥100 USD $0.089775
≥500 USD $0.086783
≥1000 USD $0.084788

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 236mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 122m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 4V
Gate Charge (Qg) (Max) @ Vgs 9.45nC @ 5V
Rise Time 36ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage -8V

Alternative Model

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