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SI5432DC-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 6A 1206-8
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Inventory: 6087
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.169575
≥1 USD $0.169575
≥10 USD $0.138653
≥100 USD $0.134663
≥500 USD $0.130673
≥1000 USD $0.125685
≥10000 USD $0.112718

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20MOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 6.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 20V

Dimensions

Height 1.1mm
Length 3.05mm
Width 1.65mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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