Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 2.1MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1m Ω @ 168A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8850pF @ 50V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 61ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 118 ns
Continuous Drain Current (ID) 293A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V